| Autor: |
Burk, Al A., O'Loughlin, Michael J., Sumakeris, Joseph J., Hallin, C., Berkman, Elif, Balakrishna, Vijay, Young, Jonathan, Garrett, L., Irvine, Kenneth G., Powell, Adrian R., Khlebnikov, Y., Leonard, R.T., Basceri, C., Hull, Brett A., Agarwal, Anant |
| Zdroj: |
Materials Science Forum; September 2008, Vol. 600 Issue: 1 p77-82, 6p |
| Abstrakt: |
The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer, vapor phase epitaxial (VPE) warm-wall planetary reactors. It will be shown how the recent emergence of low-cost high-quality 100-mm diameter epitaxial SiC wafers is enabling the economical production of advanced wide-bandgap Power–Switching devices. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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