Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
| Autor: | Tupitsyn, Eugene Y., Galyukov, Alexander, Bogdanov, Maxim V., Kulik, Alexey, Ramm, Mark S., Makarov, Yuri N., Sudarshan, Tangali S. |
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| Zdroj: | Materials Science Forum; September 2008, Vol. 600 Issue: 1 p27-30, 4p |
| Abstrakt: | In this work the problem of growth rate decaying during growth is considered. A new design and growth profiles are suggested in order to reduce deviations of growth parameters during the process of growth. |
| Databáze: | Supplemental Index |
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