| Autor: |
Bartsch, Wolfgang, Mitlehner, Heinz, Gediga, S. |
| Zdroj: |
Materials Science Forum; September 2007, Vol. 556 Issue: 1 p889-894, 6p |
| Abstrakt: |
In this contribution we summarize measurements on bipolar high voltage SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4° off the [0001] basal plane, whereas the p-emitter thickness was varied in predetermined ratios to the n-base thickness. The switching behaviour of optimized 6.5 kV-Diodes at a current level of 25 A is shown at DC link voltages up to 4 kV and at a junction temperature of 125°C. Experimental results are discussed in terms of snappiness. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
