| Autor: |
Lee, Chong Mu, Park, Anna, Park, Su Young, Park, Min Woo |
| Zdroj: |
Materials Science Forum; May 2007, Vol. 544 Issue: 1 p937-940, 4p |
| Abstrakt: |
Effects of the O2/Ar flow ratio in the reactive sputtering process and the annealing temperature on the structure and surface roughness of ZrO2 films and the electric properties of Pt/ZrO2/Si MOS capacitors in which the ZrO2 film was deposited by magnetron sputtering have been investigated. The optimum process parameters of the Pt/ZrO2/Si capacitor based on reactively sputtered- ZrO2 determined in such a way as the capacitance is maximized and the leakage current, the oxide charge, and the interface trap density are minimized is the O2/Ar flow ratio of 1.5 and the annealing temperature of 800℃ |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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