| Autor: |
Fujisawa, Hiroyuki, Tsuji, Takashi, Nishiura, Masaharu |
| Zdroj: |
Materials Science Forum; October 2006, Vol. 527 Issue: 1 p1297-1300, 4p |
| Abstrakt: |
This paper reports the channel mobilities of MOSFETs formed on the trench sidewalls with different crystal faces including (0001), (000-1), (1-100) and (0-33-8) using 4H-SiC (11-20) substrates. Deposited poly-Si was oxidized in wet ambient to form the gate oxide, and annealed in N2O (10%) ambient. The order of drain current of trench sidewall MOSFETs was (0-33-8) > (1-100) > (000-1) = (0001). We could gain comparatively high channel mobility on the (0-33-8) face. The maximum effective channel mobility (μeff) was 35cm2/Vs, and μeff at 2.5MV/cm was 29 cm2/Vs on the (0-33-8) face. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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