| Autor: |
Sankin, Igor, Bondarenko, V., Kelley, Robin L., Casady, Jeff B. |
| Zdroj: |
Materials Science Forum; October 2006, Vol. 527 Issue: 1 p1207-1210, 4p |
| Abstrakt: |
Wide bandgap semiconductor materials such as SiC or GaN are very attractive for use in high-power, high-temperature, and/or radiation resistant electronics. Monolithic or hybrid integration of a power transistor and control circuitry in a single or multi-chip wide bandgap power semiconductor module is highly desirable for such applications in order to improve the efficiency and reliability. This paper describes a new monolithic SiC JFET IC technology for high-temperature smart power applications that allows for on-chip integration of control circuitry and normally-off power switch. In order to demonstrate the feasibility of this technology, hybrid logic gates with maximum switching frequency > 20 MHz and normally-off 900 V power switch have been fabricated on alumina substrates using discrete enhanced and depletion mode vertical trench JFETs. |
| Databáze: |
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