| Autor: |
Matocha, Kevin, Cowen, Chris S., Beaupre, Richard, Tucker, Jesse B. |
| Zdroj: |
Materials Science Forum; October 2006, Vol. 527 Issue: 1 p983-986, 4p |
| Abstrakt: |
4H-SiC MOS capacitors were used to characterize the effect of reactive-ion etching of the SiC surface on the electrical properties of N2O-grown thermal oxides. The oxide breakdown field reduces from 9.5 MV/cm with wet etching to saturate at 9.0 MV/cm with 30% reactive-ion over-etching. Additionally, the conduction-band offset barrier height, φB, progressively decreases from 2.51 eV with wet etching to 2.46 eV with 45% reactive-ion over-etching. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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