| Autor: |
Soloviev, Stanislav I., Sandvik, Peter M., Arthur, Steve, Matocha, Kevin, Maximenko, S.I., Sudarshan, Tangali S. |
| Zdroj: |
Materials Science Forum; October 2006, Vol. 527 Issue: 1 p427-430, 4p |
| Abstrakt: |
In this work, we investigated the effect of crystal defects on reverse I-V characteristics of avalanche photodiodes (APDs) using electron-beam induced current (EBIC) mode of SEM. Two types of SiC APD structures (I and II) were fabricated using 2 inch p-doped substrates with n-doped epilayers and 3 inch n-doped substrates with p- and n- epilayers. Areas of the formed diodes were approximately 1 mm2. The devices without any kind of electrically active 3-D structural defects demonstrated breakdown voltages close to theoretical values, ~500 V for the APD Type I and ~1200 V for Type II APD. Stability of Type I devices was tested by applying a short pulse of high voltage (~800 V). EBIC images, taken prior to and after the failure test, showed new defects in the dislocation free area, which, presumably, were caused by thermal breakdown. |
| Databáze: |
Supplemental Index |
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