| Autor: |
Zhang, Jie, Mazzola, Janice, Hoff, Carl, Rivas, C., Romano, Esteban, Casady, Janna R.B., Mazzola, Michael S., Casady, Jeff B., Matocha, Kevin |
| Zdroj: |
Materials Science Forum; October 2006, Vol. 527 Issue: 1 p195-198, 4p |
| Abstrakt: |
This paper presents SiC CVD epitaxy for MESFET fabrication in a horizontal hot-wall reactor with gas foil rotation. Excellent uniformity of < 2% for thickness and < 10% for doping has been routinely obtained for both 3x2-in. and 1x3-in. growth. The highly uniform epitaxy is maintained for the growth of a large range of doping concentrations (less than 5x1015 to greater than 1.5x1019 cm-3) and thicknesses (0.25 – 60 μm). MESFET buffer/channel structure has been characterized with SIMS measurement showing sharp interface transition. Pinch-off voltages are extracted from CV measurements over a full 2-in. wafer. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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