| Autor: |
Kim, Hyoun Woo, Myung, Ju Hyun, Shim, S.H. |
| Zdroj: |
Materials Science Forum; March 2006, Vol. 510 Issue: 1 p654-657, 4p |
| Abstrakt: |
We have synthesized gallium oxide (Ga2O3) nanomaterials at two different growth temperatures on iridium (Ir)-coated substrates by thermal evaporation of GaN powders. The products consist mainly of nanobelts, with some additional nanosheets. The nanobelts were of a single-crystalline monoclinic Ga2O3 structure. The broad emission photoluminescence band of 900ºC-products had a different peak position from that of the 970ºC-products. |
| Databáze: |
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