| Autor: |
Fujihira, Keiko, Tarui, Yoichiro, Ohtsuka, Ken Ichi, Imaizumi, Masayuki, Takami, Tetsuya |
| Zdroj: |
Materials Science Forum; May 2005, Vol. 483 Issue: 1 p697-700, 4p |
| Abstrakt: |
The effect of N2O anneal on channel mobility of inversion-type 4H-SiC n-channel MOSFET has been systematically investigated. It is found that the mobility increases with increasing anneal temperature from 900 to 1150°C. The highest field effect mobility of 30 cm2/Vs is achieved by 1150°C anneal for 3 h, which is about 20 times higher than that for non-annealed MOSFET. In order to investigate the oxide reliability, TDDB measurement has been performed on SiO2 grown on n-type 4H-SiC. The oxide lifetime is found to be drastically improved by N2O anneal. |
| Databáze: |
Supplemental Index |
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