| Autor: |
Machado, W.V.M., Justo, João F., Assali, Lucy V.C. |
| Zdroj: |
Materials Science Forum; May 2005, Vol. 483 Issue: 1 p531-534, 4p |
| Abstrakt: |
The electronic and structural properties of isolated 3d-transition metal impurities in 3C, 4H, and 2H silicon carbide have been investigated bytotal energy ab initio methods. The stability, spin states and transition energies of substitutional (Si sub-lattice) Cr, Mn, and Fe impurities in several charge states were computed. Our results are discussed in the context of available experimental data. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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