| Autor: |
Mazzola, Michael S., Sunkari, Swapna G., Mazzola, Janice, Das, Hrishikesh, Melnychuck, Galyna, Koshka, Yaroslav, Wyatt, Jeffery L., Zhang, Jie |
| Zdroj: |
Materials Science Forum; May 2005, Vol. 483 Issue: 1 p397-400, 4p |
| Abstrakt: |
Room temperature Fourier Transform Infrared Reflection Spectroscopy (FTIR) was used to investigate the thickness and Free Carrier Concentration (FCC) of heavily and lightly doped 4H and 6H-SiC epitaxial films. Multiple epitaxial layer stacks typical of lateral devices such as the MESFET were grown on 6H-SiC semi-insulating substrates. The estimation of thickness and FCC of the n-channel epi layer is improved by studying the Longitudinal Optical Phonon Plasmon Coupled Modes (LPP). A modelbased analysis of the experimental reflectance spectra from these samples is performed using a dielectric function that accounts for the phonon-photon coupling and plasmonphoton coupling. The value of the LPP+ mode frequency estimated from the reflectance spectrum in the range 600-1200 cm-1 is observed to increase in direct correlation with the electron free-carrier concentration. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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