| Autor: |
Kalinina, Evgenia V., Kholuyanov, G., Onushkin, G., Davydov, D.V., Strel'chuk, Anatoly M., Konstantinov, Andrey O., Hallén, Anders, Skuratov, V.A., Kuznetsov, Andrej Yu. |
| Zdroj: |
Materials Science Forum; May 2005, Vol. 483 Issue: 1 p377-380, 4p |
| Abstrakt: |
The influence of the irradiation with neutrons, Kr+ (245 MeV) and Bi+ (710 MeV) ions on the optical and electrical properties of high-resistivity, high-purity 4H-SiC epitaxial layers grown by chemical vapor deposition was investigated using photoluminescence and deep-level transient spectroscopy. Electrical characteristics were studied using Al and Cr Schottky barriers as well as p+-n-n+ diodes fabricated by Al ion implantation on this epitaxial layers. It was found that both "light" neutrons and high energy heavy ions introduced identical defect centers in 4H-SiC. So, even at extremely high density of the ionization energy of 34 keV/nm, typical for Bi+ ion bombardment, damage structure formation in SiC single crystal is governed by energy loss in elastic collisions. |
| Databáze: |
Supplemental Index |
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