| Autor: |
Peters, Dethard, Elpelt, Rudolf, Schörner, Reinhold, Dohnke, Karl-Otto, Friedrichs, Peter, Stephani, Dietrich |
| Zdroj: |
Materials Science Forum; May 2005, Vol. 483 Issue: 1 p977-980, 4p |
| Abstrakt: |
Large area 4H-SiC PIN diodes have been fabricated which exhibit a stable avalanche ranging between 4.5 and 5.5 kV. The avalanche occurs at an electrical field strength of 2.1 MV/cm at the pn junction. The temperature coefficient of the avalanche is positive (0.3 V/K). The avalanche is tested in DC mode. The device concept as well as the fabrication process is described in detail. Static and dynamic characteristics are shown. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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