Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap
Autor: | Negoro, Yuki, Katsumoto, K., Kimoto, Tsunenobu, Matsunami, Hiroyuki |
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Zdroj: | Materials Science Forum; June 2004, Vol. 457 Issue: 1 p933-936, 4p |
Abstrakt: | Not Available |
Databáze: | Supplemental Index |
Externí odkaz: |