Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap

Autor: Negoro, Yuki, Katsumoto, K., Kimoto, Tsunenobu, Matsunami, Hiroyuki
Zdroj: Materials Science Forum; June 2004, Vol. 457 Issue: 1 p933-936, 4p
Abstrakt: Not Available
Databáze: Supplemental Index