Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications
| Autor: | Thomas, Bernd, Bartsch, Wolfgang, Stein, René A., Schörner, Reinhold, Stephani, Dietrich |
|---|---|
| Zdroj: | Materials Science Forum; June 2004, Vol. 457 Issue: 1 p181-184, 4p |
| Abstrakt: | Not Available |
| Databáze: | Supplemental Index |
| Externí odkaz: |
|