The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation
Autor: | Felsl, Hans Peter, Wachutka, G., Rupp, Roland |
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Zdroj: | Materials Science Forum; September 2003, Vol. 433 Issue: 1 p839-842, 4p |
Abstrakt: | Not Available |
Databáze: | Supplemental Index |
Externí odkaz: |