The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation

Autor: Felsl, Hans Peter, Wachutka, G., Rupp, Roland
Zdroj: Materials Science Forum; September 2003, Vol. 433 Issue: 1 p839-842, 4p
Abstrakt: Not Available
Databáze: Supplemental Index