Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs

Autor: Imaizumi, Masayuki, Tarui, Yoichiro, Sugimoto, Hiroshi, Ohtsuka, Ken Ichi, Takami, Tetsuya, Ozeki, Tatsuo
Zdroj: Materials Science Forum; April 2002, Vol. 389 Issue: 1 p1203-1206, 4p
Abstrakt: Not Available
Databáze: Supplemental Index