Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
| Autor: | Ohtsuka, Ken Ichi, Sugimoto, Hiroshi, Kinouchi, Shin Ichi, Tarui, Yoichiro, Imaizumi, Masayuki, Takami, Tetsuya, Ozeki, Tatsuo |
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| Zdroj: | Materials Science Forum; April 2002, Vol. 389 Issue: 1 p1165-1168, 4p |
| Abstrakt: | Not Available |
| Databáze: | Supplemental Index |
| Externí odkaz: |
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