4H-SiC Delta-Doped Accumulation-Channel MOS FET
| Autor: | Yokogawa, Toshiya, Takahashi, Kunimasa, Kusumoto, Osamu, Uchida, Masao, Yamashita, Kenya, Kitabatake, Makoto |
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| Zdroj: | Materials Science Forum; April 2002, Vol. 389 Issue: 1 p1077-1080, 4p |
| Abstrakt: | Not Available |
| Databáze: | Supplemental Index |
| Externí odkaz: |
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