Depth Distribution of Lattice Damage-Related DI and DII Defects after Ion Implantation and Annealing of 6H-SiC

Autor: Koshka, Yaroslav, Melnychuck, Galyna
Zdroj: Materials Science Forum; April 2002, Vol. 389 Issue: 1 p513-516, 4p
Abstrakt: Not Available
Databáze: Supplemental Index