Depth Distribution of Lattice Damage-Related DI and DII Defects after Ion Implantation and Annealing of 6H-SiC
Autor: | Koshka, Yaroslav, Melnychuck, Galyna |
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Zdroj: | Materials Science Forum; April 2002, Vol. 389 Issue: 1 p513-516, 4p |
Abstrakt: | Not Available |
Databáze: | Supplemental Index |
Externí odkaz: |