Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport

Autor: Wang, Shao Ping, Sanchez, Edward M., Kopec, A., Poplawski, S., Ware, R., Holmes, S.N., Balkas, Cengiz M., Timmerman, A.G.
Zdroj: Materials Science Forum; April 2002, Vol. 389 Issue: 1 p35-38, 4p
Abstrakt: Not Available
Databáze: Supplemental Index