Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface Characterization

Autor: Defives, D., Durand, O., Wyczisk, F., Olivier, J., Noblanc, Olivier, Brylinski, C.
Zdroj: Materials Science Forum; May 2000, Vol. 338 Issue: 1 p411-414, 4p
Abstrakt: Not Available
Databáze: Supplemental Index