Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures
| Autor: | Zetterling, C.M., Östling, Mikael, Harris, Chris I., Nordell, Nils, Wongchotigul, K., Spencer, Michael G. |
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| Zdroj: | Materials Science Forum; February 1998, Vol. 264 Issue: 1 p877-880, 4p |
| Abstrakt: | Not Available |
| Databáze: | Supplemental Index |
| Externí odkaz: |
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