Deep Levels in SiC:V by High Temperature Transport Measurements
| Autor: | Mitchel, W.C., Perrin, Ronald, Goldstein, Jonathan, Roth, Matthew D., Ahoujja, M., Smith, S.R., Evwaraye, A.O., Solomon, J.S., Landis, G., Jenny, Jason R., McD. Hobgood, H., Augustine, G., Balakrishna, Vijay |
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| Zdroj: | Materials Science Forum; February 1998, Vol. 264 Issue: 1 p545-548, 4p |
| Abstrakt: | Not Available |
| Databáze: | Supplemental Index |
| Externí odkaz: |
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