Some Features of a Nucleation Layer Growth Process and its Influence on the GaN Epilayer Quality

Autor: Lundin, W.V., Usikov, A.S., Pushnyi, B.V., Ushakov, U.I., Stepanov, M.V., Shmidt, N.M., Sakharov, A.V., Zadiranov, Yu.M., Suturin, S.M., Busov, V.
Zdroj: Materials Science Forum; February 1998, Vol. 264 Issue: 1 p1125-1128, 4p
Abstrakt: Not Available
Databáze: Supplemental Index