Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers

Autor: Laine, T., Saarinen, Kimmo, Hautojärvi, Pekka J., Corbel, C.
Zdroj: Materials Science Forum; December 1997, Vol. 258 Issue: 1 p879-884, 6p
Abstrakt: Not Available
Databáze: Supplemental Index