Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers
Autor: | Laine, T., Saarinen, Kimmo, Hautojärvi, Pekka J., Corbel, C. |
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Zdroj: | Materials Science Forum; December 1997, Vol. 258 Issue: 1 p879-884, 6p |
Abstrakt: | Not Available |
Databáze: | Supplemental Index |
Externí odkaz: |