Electron-Trapping Defects in MBE-Grown Relaxed n-In0.05Ga0.95As on Gallium Arsenide

Autor: Irvine, A.C., Howard, L.K., Palmer, D.W.
Zdroj: Materials Science Forum; January 1992, Vol. 83 Issue: 1 p1291-1296, 6p
Abstrakt: Not Available
Databáze: Supplemental Index