| Autor: |
Sarrieu, C., Barth, N., Guise, A., Arnault, J. C., Saada, S., Barrat, S., BauerGrosse, E. |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; September 2009, Vol. 206 Issue: 9 p1967-1971, 5p |
| Abstrakt: |
Diamond synthesis by microwave plasma assisted chemical vapour deposition MPCVD with a bias enhanced nucleation BEN step constitutes the most efficient method to obtain heteroepitaxy and is also useful to reach high nucleation densities. In this study, sequential reflection highenergy electron diffraction RHEED and Xray photoelectron spectroscopy XPS investigations enabled us to highlight the formation of amorphous carbon and crystalline silicon carbide on the surface before diamond growth. By varying the bias voltage, we underlined an optimized value corresponding to a higher quantity of amorphous carbon. This quantity is strongly correlated to the diamond nucleation density. As for the quality of the SiC texture, this seems to be directly linked to bias voltage too: low bias voltages enable us to obtain high oriented 3CSiC whereas high bias voltages lead to a completely misoriented polycrystalline SiC film. |
| Databáze: |
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