Annealing-Induced Changes in Electrical, Optical, and Magnetic Properties of Phosphorus Doped Bulk Zn1–xMnxTe

Autor: Khoi, Le Van, Sawicki, M., Dybko, K., Domukhovski, V., Story, T., Dietl, T., J&ecedil;drzejczak, A., Kossut, J., Gał&acedil;zka, R.R.
Zdroj: Physica Status Solidi (B) - Basic Solid State Physics; January 2002, Vol. 229 Issue: 1 p53-56, 4p
Abstrakt: We report on successful growth of heavily p-type doped bulk Zn<1–x
Databáze: Supplemental Index