| Autor: |
Sasaki, Hitoshi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; June 2009, Vol. 206 Issue: 6 p1160-1163, 4p |
| Abstrakt: |
An mplane GaN layer with a thickness of approximately 500 μm was successfully obtained on a conventional mplane sapphire substrate with a diameter of 2 inches. The GaN layer was grown by hydride vapor phase epitaxy HVPE on a buffer layer of lowtemperature LT GaNAl4C3structure deposited on the sapphire substrate by metalorganic chemical vapor deposition MOCVD. The deposition temperature of the Al4C3layer affected the appearance of the mplane GaN layer. The caxes of the GaN layer is parallel to the aaxis of the sapphire substrate. The thick GaN layer spontaneously separated from the sapphire substrate after its growth. Complete selfseparation of the mplane GaN from the sapphire substrate was achieved with good reproducibility when the thickness of the Al4C3layer was 70–100 nm. By lapping and polishing the selfseparated GaN crystal, a freestanding mplane GaN wafer with a diameter of 45 mm was obtained. © 2009 WILEYVCH Verlag GmbH & Co. KGaA, Weinheim |
| Databáze: |
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