| Autor: |
Kulyuk, L. L., Aktsipetrov, O. A., Shutov, D. A., Strumban, E. E. |
| Zdroj: |
Journal of the Optical Society of America B: Optical Physics; August 1991, Vol. 8 Issue: 8 p1766-1769, 4p |
| Abstrakt: |
A method that uses second-harmonic generation is applied to the study of the oxidized Si(111) surface by in situ control of thermal and synthetic oxide etching with monolayer atomic resolution. It is shown that the thin oxide layer that is adjacent to the Si surface (with a 5–10-Å thickness) exerts a strong influence on the reflected second-harmonic intensity. The contribution of the remaining bulk oxide is insignificant. Various contributions to the nonlinear polarization in the SiO_2–Si interface, such as the static electric field, the inhomogeneous deformation, and the effect of a crystalline oxide layer, are considered. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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