| Autor: |
Aleshkin, V.Ya., Andronov, A.A., Antonov, A.V., Bekin, N.A., Gavrilenko, V.I., Muravev, A.V., Pavlov, S.G., Revin, D.G., Shastin, V.N., Malkina, I.G., Uskova, E.A., Zvonkov, B.N. |
| Zdroj: |
Physica Status Solidi (B) - Basic Solid State Physics; November 1997, Vol. 204 Issue: 1 p563-565, 3p |
| Abstrakt: |
Conditions for population inversion between continuum and bound states of a shallow quantum well in a selectively doped multi-quantum-well system at high lateral electric field are analyzed in a two temperature model. Experimental data on far infrared emission and absorption under real space transfer (RST) in p-type δ-doped InxGa1xAs/GaAs MQWs, which indirectly confirmed existence of hot hole population inversion, are presented. |
| Databáze: |
Supplemental Index |
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