| Autor: |
Losták, P., Drasar, C., Klichová, I., Navrátil, J., Cernohorský, T. |
| Zdroj: |
Physica Status Solidi (B) - Basic Solid State Physics; March 1997, Vol. 200 Issue: 1 p289-296, 8p |
| Abstrakt: |
Iron-doped Bi2Se3 single crystals (cFe = 0 to 5.3 × 1019 atoms cm3) were prepared by a modified Bridgman method from elements of 5N purity. The obtained samples were characterized by measurements of reflectivity in the plasma-resonance frequency region, optical transmission in the IR region, Hall coefficient, electrical conductivity and the Seebeck coefficient at room temperature. The doping of Bi2Se3 single crystals by iron leads to an increase in the concentration of free electrons. This effect is ascribed to the presence of point defects formed by ionized iron atoms entering interstitial positions in the crystal lattice of Bi2Se3. |
| Databáze: |
Supplemental Index |
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