| Autor: |
Metzger, T., pler, R. H, Born, E., Christiansen, S., Albrecht, M., Strunk, H.P., Ambacher, O., Stutzmann, M., Stömmer, R., Schuster, M., Göbel, H. |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; August 1997, Vol. 162 Issue: 2 p529-535, 7p |
| Abstrakt: |
AlN films, grown by metalorganic chemical vapour deposition on c-plane sapphire, were investigated by high-resolution X-ray diffraction. In Ω-scans very narrow peaks superimposed on a broader diffraction signal were found. The occurrence of very narrow rocking curves is explained in terms of coherent X-ray scattering. This phenomenon is caused by a small rotational out-of-plane disorder resulting in a resolution-limited component of the rocking curve. The tilt (out-of-plane disorder) of individual crystallites is caused by a rotation with small angles around an axis lying parallel to the substrate surface. The diffuse component of the rocking curve was used for the structural characterization of the epitaxial films and a detailed determination of structural imperfection by X-ray diffraction could be obtained by measuring asymmetric reflections. The structural properties of the AlN films are confirmed by atomic force microscopy and transmission electron microscopy. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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