| Autor: |
Kuhn, B., Friemelt, K., Fess, K., Bucher, E. |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; March 1997, Vol. 160 Issue: 1 p151-158, 8p |
| Abstrakt: |
We report on conductivity and Hall effect measurements made on thin films of the quaternary compound Cu1xAgxGaTe2 (x = 0, 0.25, 0.5, 0.75, 1). The films were prepared by flash evaporation of prereacted material. The prereacted polycrystalline material was analyzed by X-ray diffraction and the lattice constants were derived. It was found that the electrical resistivity for the thin films can be changed by the copper/silver ratio. The values at room temperature varied from 1.5×104 Ω cm for AgGaTe2 to 1.3 Ω cm for CuGaTe2. All the samples showed p-type conductivity. From temperature dependent Hall effect measurements between 30 and 400 K of CuGaTe2 and AgGaTe2 thin films, the hole concentrations and the acceptor activation energies were determined. |
| Databáze: |
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