| Autor: |
Barsov, S. G., Getalov, A. L., Gordeev, V. A., Kruglov, S. P., Kudinov, V. I., Kuz'min, L. A., Mikirtychyants, S. M., Minaichev, E. V., Myasishcheva, G. G., Obukhov, Y. V., Savel'ev, G. I., Firsov, V. G., Shcherbakov, G. V. |
| Zdroj: |
Hyperfine Interactions; January 1984, Vol. 18 Issue: 1-4 p635-638, 4p |
| Abstrakt: |
AμSR study has been carried out on high resistivity single crystal gallium arsenide (GaAs). Three characteristic states involving theμ+ muon (Mu*, Mu,μ+ were shown to exist in a binary semiconductor, similar to the case of elemental semiconductors. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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