| Autor: |
Bemelmans, H., Borghs, G., Langouche, G. |
| Zdroj: |
Hyperfine Interactions; July 1990, Vol. 56 Issue: 1-4 p1553-1556, 4p |
| Abstrakt: |
Abstract: 129mTe-atoms were implanted in Al x Ga1−x As-samples (withx varying from 0 to 1) with a dose of 21013 atoms/cm2. After rapid thermal annealing to 900C, a variation in the Mssbauer spectra as a function ofx is observed. Forx between 0.2 and 0.7, a component with a large electric field gradient is dominant in the spectra, while for the other values ofx a single line dominates. The presence of the component with a large electric field gradient coincides with the presence of the so-called “DX-center”. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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