| Autor: |
Glushchenko, N. I., Zyuganov, A. N., Skidan, E. P., Chigarkova, R. V. |
| Zdroj: |
Russian Physics Journal; February 1981, Vol. 24 Issue: 2 p136-139, 4p |
| Abstrakt: |
The current-voltage characteristics of ZnSe single crystals were investgated. These characteristics for a metal-semiconductor-metal structure are interpreted with allowance for the influence of the finite injection capacity of the contact. The generalized approximate theory of current-voltage characteristics is used to estimate the bulk and contact parameters of the InGa-ZnSe system and construct an energy diagram of the n+-n junction. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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