Current carrier mobility in manganese-doped cadmium telluride

Autor: Deibuk, V. G., Chobotar, V. I., Mel'nichuk, S. V., Ul'yanitskii, K. S., Nitsovich, V. M., Savitskii, A. V.
Zdroj: Russian Physics Journal; April 1982, Vol. 25 Issue: 4 p311-314, 4p
Abstrakt: The possibility of substantial influence of a manganese impurity on the magnetic and optical properties of CdTe, which is explained by the state and interaction of the Mn 3d5-electron spins in the CdTe crystal lattice, is shown in [1–3]. An investigation of the influence of the Mn impurity on current carrier scattering in this material is of interest. To this end, the temperature dependence of the Hall mobility of electrons in CdTe-Mn single crystals is investigated in this paper in the temperature range 77–435°K.
Databáze: Supplemental Index