| Autor: |
Il'chenko, V. V., Strikha, V. I. |
| Zdroj: |
Russian Physics Journal; February 1985, Vol. 28 Issue: 2 p165-169, 5p |
| Abstrakt: |
In the paper an analytic calculation is carried out of the volt-ampere characteristics of a Schottky barrier diode on amorphous silicon for an exponential distribution of the density of localized states in the mobility gap of a-Si. Explicit expressions are written for the volt-ampere characteristics with and without the inclusion of the image forces. It is shown that taking into account the image forces in the case of an intimate contact can lead to a substantial increase in the reverse currents through the diode, at the same time changing slightly the slope of both the forward and reverse branches of the volt-ampere characteristics plotted on a semilogarithmic scale. |
| Databáze: |
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| Externí odkaz: |
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