| Autor: |
Slavnikov, V. S., Potseluev, L. P., Nesmelov, N. S. |
| Zdroj: |
Russian Physics Journal; December 1994, Vol. 37 Issue: 12 p1185-1187, 3p |
| Abstrakt: |
A study is made of the mechanical stresses arising during all the stages of fabrication of dielectric—semiconductor structures on indium arsenide with an anodic oxide. It is shown that grinding, electrodynamic polishing, and oxidation lead to the appearance in the semiconductor of tensile stresses and in the anodic oxide of compressive stresses, which may be one possible cause of the high density of surface states in MDS structure on indium arsenide with an anodic oxide. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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