| Autor: |
Muslin, D. V., Lyapina, N. Sh., Klimov, E. S., Kirilicheva, V. G., Razuvaev, G. A. |
| Zdroj: |
Russian Chemical Bulletin; June 1980, Vol. 29 Issue: 6 p998-1002, 5p |
| Abstrakt: |
1.The stability of silicon-containing phenoxyl radicals depends on the degree of steric shielding of the reaction center, responsible for the dimerization, by the trialkylsilyl groups.2.A linear relationship exists between the logarithms of the relative destruction rate constants of silicon-containing phenoxyl radicals and the sum of the steric constants of the alkyl substituents on the silicon atom.3.The conversion of silicon-containing phenoxyl radicals to tetrasubstituted disiloxybiphenyls proceeds via the dimerization of the radicals to thea-ketomethyl form at the carbon atoms to which the trialkylsilyl groups, which migrate to the oxygen, are attached. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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