| Autor: |
Tuck, B., Mills, J. S. K., Hartwill, A. J. |
| Zdroj: |
Journal of Materials Science; May 1976, Vol. 11 Issue: 5 p847-854, 8p |
| Abstrakt: |
This paper describes the action of solutions containing nitric acid, hydrofluoric acid and water on GaAs of (1 0 0) orientation. Single-crystal slices of the semiconductor were immersed in the etch and the rate of dissolution was measured. Results were taken over a wide range of composition of the solution. The results show a marked resemblance to the etch-rate data for silicon in the same etching solution, although the actual etching rates for GaAs were lower. The semiconductor surfaces were observed carefully after etching, using techniques of optical microscopy and scanning electron microscopy. Etch hillocks were observed for many compositions of the etch. It was found that the hillocks were covered by a layer of oxide: if any of this oxide covering came off, the hillock quickly disappeared. Sequential etching experiments showed that the hillocks were not associated with dislocations. Both the etch-rate data and the microscopic examination of the GaAs surfaces suggest that the system is probably diffusion-limited over the range of etch composition studied in this work. |
| Databáze: |
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| Externí odkaz: |
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