| Autor: |
Inoue, Zenzaburo, Inomata, Yoshizo, Tanaka, Hirokichi, Komatsu, Hiroshi |
| Zdroj: |
Journal of Materials Science; November 1982, Vol. 17 Issue: 11 p3197-3203, 7p |
| Abstrakt: |
New polytypes of silicon carbide, 20H(a) and 20H(b), have been synthesized in a very pure graphite crucible reacted with molten silicon at 2000 and 2300° C, respectively. A simplified method for generating the layer sequences has been applied to the determination of their crystal structures. The polytypes of 20H(a) and 20H(b) are successfully revealed by this method to be (44222222) and (32322323), respectively. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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