Photoexcitation of emission currents in a metal-insulator-semiconductor system

Autor: Benson, F. M., Miller, A. A., Shaposhnikov, A. N., Yankelevich, Yu. B.
Zdroj: Russian Physics Journal; June 1977, Vol. 20 Issue: 6 p766-769, 4p
Abstrakt: The current-voltage characteristics of the transmitted and emitted current were investigated under photoexcitation conditions in metal-insulator-semiconductor systems Sin-Si3N4-Al and SipSin-Si3N4-Al. The laws governing the current flow are analyzed and the region where there is proportional conversion of a light signal into a free-electron flux is defined.
Databáze: Supplemental Index