Effect of neutron bombardment on the forward current of silicon mesa diodes
| Autor: | Korshunov, V. D., Kostyuchenko, E. A. |
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| Zdroj: | Russian Physics Journal; February 1969, Vol. 12 Issue: 2 p225-227, 3p |
| Abstrakt: | 1.The use of the initial region of the I, V characteristics of the diodes is recommended for reduced radiation sensitivity.2.The decrease in the forward current of the mesa diodes studied can be attributed primarily to an increase in the resistance of the diode base during neutron bombardment. |
| Databáze: | Supplemental Index |
| Externí odkaz: |
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