| Autor: |
Vinetskii, V. L., Manoilo, M. A., Matviichuk, A. S., Strikha, V. I., Kholodar', G. A. |
| Zdroj: |
Russian Physics Journal; June 1990, Vol. 33 Issue: 6 p487-491, 5p |
| Abstrakt: |
The influence of irradiation of silicon p+-n diodes by 15 to 30 keV electrons on the deep level transient spectroscopy (DLTS) spectra of the diodes was studied. It was discovered that irradiation leads to the transformation of the DLTS spectra in crystals containing defect clusters. A comparison of the depth of the p-n junction in the crystal with the penetration depth of the electrons indicates that the detected rearrangement of defects is due to secondary electrons diffusing into the p-n junction. A recombination-stimulated mechanism of defect rearrangement is proposed. In crystals containing only point defects, transformation of the DLTS spectra is not observed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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