| Autor: |
Popov, D. E., Pavlov, S. D., Savushkin, S. E. |
| Zdroj: |
Russian Physics Journal; April 1990, Vol. 33 Issue: 4 p339-343, 5p |
| Abstrakt: |
We develop a theory of quantum states caused by defects of the crystal lattice during planar channeling of electrons. Points defects are considered. We obtain expressions for the wave function and the transverse energy of the “defect” states and make estimates for {110} planar channeling in silicon by electrons with energies of 1–10 MeV. Substitutional, interstitial, and vacancy impurity atoms are examined. We propose using properties of the electromagnetic radiation of electrons in defect states for diagnostics of single crystals. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
Full text from SpringerLink